This array is manufactured on a 0.8uM two-layer metal CMOS technology. The P-type and N-type transistors available on the chip may be interconnected to form either digital logic or analog circuit. This array is able not only implement high speed digital functions like Prescalar clocking at 200MHz, but also analog functions like OpAmps with 250MHz unity gain band width, or Voltage Comparator with 4nS delay at 40mV input over drive.
Absolute Maximum Ratings: |
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Supply Voltage |
3.0V to 7.0V |
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Voltage at Any Pin |
Vss-.3V to Vdd+.3V |
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Operating Temperature |
0°C to 75°C |
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Storage Temperature |
-50°C to 150°C |
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Lead Temperature |
300°C |
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Analog
Characteristic:
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(Vdd = 5V, Vss = 0V, Temp = 25°C, CL = 5pF) |
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Op Amp Slew Rate, Il=200uA |
1V/30nS |
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Op Amp Offset Voltage |
+/-10mV |
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Op Amp Common Mode |
0.4V to 4.0V or 1.0V to 4.6V |
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D.C.
Characteristic:
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(Vdd = 5V, Temp = 25°C) |
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Input Leakage, Vin= 0 to 5V |
+/-1uA |
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TTL Inputs |
0.8V to 2.0V |
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CMOS Inputs |
1.25V to 3.75V |
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Output Sink, Vol = 0.4V |
8mA |
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Output Source, Voh = 2.0V |
8mA |
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A.C.
Characteristic:
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(Vdd = 5V,Temp = 25°C) (Typical case with one load) |
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Propagation Delay |
Rise |
Fall |
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2 input NAND |
0.53nS |
0.44nS |
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2 input NOR |
0.92nS |
0.29nS |
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Unit Inverter |
0.48nS |
0.24nS |
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