Text Box: Circuit Integration Tech., Inc.
High Performace Analog/Digital Circuit

 


This array is manufactured on a 0.8uM two-layer metal CMOS technology. The P-type and N-type transistors available on the chip may be interconnected to form either digital logic or analog circuit. This array is able not only implement high speed digital functions like Prescalar clocking at 200MHz, but also analog functions like OpAmps with 250MHz unity gain band width, or Voltage Comparator with 4nS delay at 40mV input over drive.

 

Typical Electrical Specifications

Absolute Maximum Ratings:

 

Supply Voltage

3.0V to 7.0V

Voltage at Any Pin

Vss-.3V to Vdd+.3V

Operating Temperature

0°C to 75°C

Storage Temperature

-50°C to 150°C

Lead Temperature

300°C

 

Analog Characteristic:

(Vdd = 5V, Vss = 0V, Temp = 25°C, CL = 5pF)

 

Op Amp Slew Rate, Il=200uA

1V/30nS

 

Op Amp Offset Voltage

+/-10mV

 

Op Amp Common Mode

0.4V to 4.0V or 1.0V to 4.6V

 

 

D.C. Characteristic:

(Vdd = 5V, Temp = 25°C)

 

Input Leakage, Vin= 0 to 5V

+/-1uA

 

TTL Inputs

0.8V to 2.0V

 

CMOS Inputs

1.25V to 3.75V

 

Output Sink, Vol = 0.4V

8mA

 

Output Source, Voh = 2.0V

8mA

 

 

A.C. Characteristic:

(Vdd = 5V,Temp = 25°C) (Typical case with one load)

 

Propagation Delay

Rise

Fall

2 input NAND

0.53nS

0.44nS

2 input NOR

0.92nS

0.29nS

Unit Inverter

0.48nS

0.24nS

 

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